Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-02-14
2006-02-14
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S592000
Reexamination Certificate
active
06998305
ABSTRACT:
A method of forming an electronic component having elevated active areas is disclosed. The method comprises providing a semiconductor substrate in a processing chamber. The semiconductor substrate has disposed thereon a polycrystalline silicon gate and exposed active areas. The method further comprises performing a deposition process in which a silicon-source gas is supplied into the processing chamber to cause polycrystalline growth on the gate and epitaxial deposition on the active areas. The method further comprises performing a flash etch back process in which polycrystalline material is etched from the gate at a first etching rate and the epitaxial layer is etched from the active areas at a second etching rate. The first etching rate is faster than the second etching rate. The deposition process and the flash etch back process can be repeated cyclically, if desired. In certain other embodiments, the deposition process is a selective epitaxial deposition process, wherein growth occurs in non-oxide regions, but not in oxide regions.
REFERENCES:
patent: 4578142 (1986-03-01), Corboy
patent: 4698316 (1987-10-01), Corboy
patent: 4704186 (1987-11-01), Jastrzebski
patent: 4710241 (1987-12-01), Komatsu
patent: 4728623 (1988-03-01), Lu
patent: 4735918 (1988-04-01), Parsons
patent: 4749441 (1988-06-01), Christenson
patent: 4758531 (1988-07-01), Beyer
patent: 4778775 (1988-10-01), Tzeng
patent: 4786615 (1988-11-01), Liaw
patent: 4793872 (1988-12-01), Meunier
patent: 4834809 (1989-05-01), Kakihara
patent: 4857479 (1989-08-01), McLaughlin
patent: 4873205 (1989-10-01), Critchlow
patent: 4891092 (1990-01-01), Jastrzebski
patent: 4897366 (1990-01-01), Smeltzer
patent: 4923826 (1990-05-01), Jastrzebski
patent: 4966861 (1990-10-01), Mieno
patent: 4981811 (1991-01-01), Feygenson
patent: 5004705 (1991-04-01), Blackstone
patent: 5037775 (1991-08-01), Reisman
patent: 5045494 (1991-09-01), Choi
patent: 5059544 (1991-10-01), Burghartz
patent: 5061644 (1991-10-01), Yue
patent: 5061655 (1991-10-01), Ipposhi
patent: 5112439 (1992-05-01), Reisman
patent: 5146304 (1992-09-01), Yue
patent: 5148604 (1992-09-01), Bantien
patent: 5164813 (1992-11-01), Blackstone et al.
patent: 5175121 (1992-12-01), Choi et al.
patent: 5182619 (1993-01-01), Pfiester
patent: 5201995 (1993-04-01), Reisman et al.
patent: 5234857 (1993-08-01), Kim et al.
patent: 5236546 (1993-08-01), Mizutani
patent: 5269876 (1993-12-01), Mizutani
patent: 5282926 (1994-02-01), Trah et al.
patent: 5324679 (1994-06-01), Kim et al.
patent: 5356510 (1994-10-01), Pribat et al.
patent: 5403751 (1995-04-01), Nishida et al.
patent: 5416354 (1995-05-01), Blackstone
patent: 5422302 (1995-06-01), Yonehara et al.
patent: 5563085 (1996-10-01), Kohyama
patent: 5591492 (1997-01-01), Hirai et al.
patent: 5798278 (1998-08-01), Chan et al.
patent: 5967794 (1999-10-01), Kodama
patent: 6057200 (2000-05-01), Prall et al.
patent: 6153010 (2000-11-01), Kiyoku et al.
patent: 6190976 (2001-02-01), Shishiguchi et al.
patent: 6225650 (2001-05-01), Tadatomo et al.
patent: 6335251 (2002-01-01), Miyano et al.
patent: 6348096 (2002-02-01), Sunakawa et al.
patent: 6376318 (2002-04-01), Lee et al.
patent: 6555845 (2003-04-01), Sunakawa et al.
patent: 2001/0046766 (2001-11-01), Asakawa
patent: 2003/0082300 (2003-05-01), Todd et al.
Arena Chantal J.
Brabant Paul D.
Italiano Joe P.
ASM America Inc.
Dang Phuc T.
Knobbe Martens Olsen and Bear LLP
LandOfFree
Enhanced selectivity for epitaxial deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Enhanced selectivity for epitaxial deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhanced selectivity for epitaxial deposition will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3703626