Engineered metal gate electrode

Details Engineered metal gate electrode Engineered metal gate electrode

2006-04-25

2006-04-25

Ngô, Ngân V. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S299000, C438S303000

Reexamination Certificate

active

07033888

ABSTRACT:
A metal gate electrode is formed with an intrinsic electric field to modify its work function and the threshold voltage of the transistor. Embodiments include forming an opening in a dielectric layer by removing a removable gate, depositing one or more layers of tantalum nitride such that the nitrogen content increases from the bottom of the layer adjacent the gate dielectric layer upwardly. Other embodiments include forming the intrinsic electric field to control the work function by doping one or more metal layers and forming metal alloys. Embodiments further include the use of barrier layers when forming metal gate electrodes.

REFERENCES:
patent: 5998873 (1999-12-01), Blair et al.
patent: 6368923 (2002-04-01), Huang
patent: 6607958 (2003-08-01), Suguro
patent: 6727560 (2004-04-01), Pan et al.
patent: 6750500 (2004-06-01), Agarwal
patent: 2002/0030222 (2002-03-01), Agarwal
patent: 2003/0008501 (2003-01-01), Bakli et al.
patent: 2003/0027393 (2003-02-01), Suguro
patent: 2005/0151262 (2005-07-01), Tamaru et al.

Affiliated with

Also associated with

Rating

Engineered metal gate electrode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Engineered metal gate electrode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Engineered metal gate electrode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3599912