Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2006-08-22
2010-10-19
Gakh, Yelena G (Department: 1797)
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
C216S058000, C216S059000, C438S037000, C438S043000, C438S055000, C438S149000, C156S345250
Reexamination Certificate
active
07815813
ABSTRACT:
An end point detection method in the case where a catalyst arranged in a treatment chamber of a gas phase reaction processing apparatus is heated at high temperature by supplying electric power thereto and the treatment is carried out by cracking a reaction gas by the catalyst heated at high temperature, comprises the steps of supplying the electric power to the catalyst from a constant current source, detecting electric potential difference between both ends of the catalyst, performing primary differentiation of the detected electric potential difference, and determining an end point of the treatment based on obtained primary differential value.
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Ikeda Hiroshi
Masuda Atsushi
Matsumura Hideki
Takao Kazuhisa
Umemoto Hironobu
Blackman William D.
Carrier Joseph P.
Carrier Blackman & Associates P.C.
Gakh Yelena G
Hixson Christopher A
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