End-of-range defect minimization in semiconductor device

Details End-of-range defect minimization in semiconductor device End-of-range defect minimization in semiconductor device

2006-08-15

2006-08-15

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C438S306000, C438S487000, C257S346000, C257S408000

Reexamination Certificate

active

07091097

ABSTRACT:
A method of fabricating a semiconductor device comprises forming a gate electrode over a substrate and forming deep amorphous regions within the substrate. And implanting dopants to form deep source/drain regions at a depth less than that of the deep amorphous regions, partially re-crystallizing portions of the deep amorphous regions to reduce their depth, and re-crystallizing the reduced amorphous regions to form activated final source/drain regions.

REFERENCES:
patent: 6555439 (2003-04-01), Xiang et al.
patent: 6680250 (2004-01-01), Paton et al.
patent: 6936505 (2005-08-01), Keys et al.
patent: 2005/0003638 (2005-01-01), Stolk

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