Encapsulated semiconductor device having metal foil covering, an

Details Encapsulated semiconductor device having metal foil covering, an Encapsulated semiconductor device having metal foil covering, an

1996-08-26

1998-11-10

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Encapsulated

With specified encapsulant

257687, 257783, 257787, 257789, 257795, 257796, H01L 2329

Patent

active

058348506

ABSTRACT:
A metal foil material for covering a semiconductor device, a semiconductor device covered with the metal foil material, and a process for producing the metal foil-covered semiconductor device are disclosed. The metal foil material is one which is, in molding a resin for encapsulating a semiconductor element using a mold, temporarily fixed on a surface of a cavity of the mold, and is adhered on a surface of a semiconductor device by injecting the encapsulating resin into the mold and molding the resin, wherein a contact angle of the face of the metal foil material which is in contact with the encapsulating resin during molding, to water is 110.degree. or less.

REFERENCES:
patent: 4177480 (1979-12-01), Hintzmann et al.
patent: 4953002 (1990-08-01), Nelson et al.
patent: 5317195 (1994-05-01), Ishikawa et al.
patent: 5406117 (1995-04-01), Dlugokecki et al.

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