Embedded stressor structure and process

Details Embedded stressor structure and process Embedded stressor structure and process

2011-05-10

2011-05-10

Parker, Kenneth A (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S222000, C438S226000, C257SE21431

Reexamination Certificate

active

07939413

ABSTRACT:
An example embodiments are structures and methods for forming an FET with embedded stressor S/D regions (e.g., SiGe), a doped layer below the embedded S/D region adjacent to the isolation regions, and a stressor liner over reduced spacers of the FET gate. An example method comprising the following. We provide a gate structure over a first region in a substrate. The gate structure is comprised of gate dielectric, a gate, and sidewall spacers. We provide isolation regions in the first region spaced from the gate structure; and a channel region in the substrate under the gate structure. We form S/D recesses in the first region in the substrate adjacent to the sidewall spacers. We form S/D stressor regions filling the S/D recesses. The S/D stressor regions can be thicker adjacent to the gate structure than adjacent to the isolation regions; We implant dopant ions into the S/D stressor regions and into the substrate below the S/D stressor regions adjacent to the isolation regions to form upper stressor doped regions.

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