Embedded phase-change memory and method of fabricating the same

Details Embedded phase-change memory and method of fabricating the same Embedded phase-change memory and method of fabricating the same

2006-12-04

2010-12-21

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257S298000, C257S536000, C257S499000, C257S509000, C257S525000, C257S526000, C257S539000, C257S552000, C257S558000, C257SE27004, C257SE27015, C257SE21422, C257SE21683, C257SE21696, C438S003000, C438S666000, C438S947000

Reexamination Certificate

active

07855421

ABSTRACT:
An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.

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