Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-25
2008-09-02
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S371000, C257S408000
Reexamination Certificate
active
07420250
ABSTRACT:
Provided are an electrostatic discharge (ESD) protection device and a method for making such a device. In one example, the ESD protection device includes a Zener diode region formed in a substrate and an N-type metal oxide semiconductor (NMOS) device formed adjacent to the Zener diode region. The Zener diode region has two doped regions, a gate with a grounded potential positioned between the two doped regions, and two light doped drain (LDD) features formed in the substrate. One of the LDD features is positioned between each of the two doped regions and the gate. The NMOS device includes a source and a drain formed in the substrate and a second gate positioned between the source and the drain.
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Huang Shao-Chang
Lee Jian-Hsing
Lee Shu-Chuan
Ong Tong-Chern
Song Ming-Hsiang
Esquerra Andres Lopez
Haynes & Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
Vu David
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