Electricity: electrical systems and devices – Electric charge generating or conducting means – Use of forces of electric charge or field
Reexamination Certificate
2003-05-29
2008-09-30
Kitov, Zeev (Department: 2836)
Electricity: electrical systems and devices
Electric charge generating or conducting means
Use of forces of electric charge or field
C361S233000, C279S110000
Reexamination Certificate
active
07430104
ABSTRACT:
An electrostatic chuck is configured for electrostatically securing a wafer while limiting charge on the wafer and physical contact between the electrostatic chuck and the wafer. The electrostatic chuck has a pair of electrodes and at least one support pin electrically isolated from the electrodes. The top portion of the support pin protrudes above the top surface of the electrodes. The support pin can be such that the top portion of the support pin is adjustable with respect to the top surfaces of the electrodes.
REFERENCES:
patent: 3916270 (1975-10-01), Wachtler et al.
patent: 3983401 (1976-09-01), Livesay
patent: 3993509 (1976-11-01), McGinty
patent: 4184188 (1980-01-01), Briglia
patent: 4356384 (1982-10-01), Gat
patent: 4384918 (1983-05-01), Abe
patent: 4692836 (1987-09-01), Suzuki
patent: 4724510 (1988-02-01), Wicker et al.
patent: 5103367 (1992-04-01), Horwitz et al.
patent: 5117121 (1992-05-01), Watanabe et al.
patent: 5561585 (1996-10-01), Barnes et al.
patent: 5946184 (1999-08-01), Kanno et al.
patent: 6305677 (2001-10-01), Lenz
patent: 6370004 (2002-04-01), Yamaguchi
patent: 6500686 (2002-12-01), Katata et al.
patent: 6639783 (2003-10-01), Shamouilian et al.
patent: 6760214 (2004-07-01), Tomaru et al.
patent: 6780278 (2004-08-01), Hayashi et al.
patent: 6831823 (2004-12-01), Ishida
patent: 6888106 (2005-05-01), Hiramatsu
patent: 6898064 (2005-05-01), Berman et al.
patent: 2001/0019472 (2001-09-01), Kanno et al.
patent: 2003/0043530 (2003-03-01), Kwon et al.
patent: 2003/0082466 (2003-05-01), del Puerto et al.
patent: 2003/0132218 (2003-07-01), Hiramatsu et al.
patent: 0 783 175 (1997-07-01), None
Hayashi et al.□□Plasma Processing Apparatus with Reduced Parasitic Capacity and Loss in RF Power□□Filed: Jun. 28, 2001□□US Patent Application Publication.
Ceramaret Alumina (Al2O3)—Physical, Mechanical, Thermal, Electrical & Chemical Properties 2000-2007 http://www.azom.com/details.asp?ArticleID=3382.
Accuratus Materials—Aluminum Oxide (Al2O3) Properties 2002 http://www.accuratus.com/alumox.html.
Patent Cooperation Treaty, PCT International Search Report, International application No. PCT/US2004/007588, International filing date Mar. 11, 2004, 4pgs.
Krivts Igor
Litman Alon
Appiled Materials, Inc.
Fahmi Tarek N.
Kitov Zeev
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