Electrostatic chuck

Electricity: electrical systems and devices – Electric charge generating or conducting means – Use of forces of electric charge or field

Reexamination Certificate

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Details

C501S153000, C501S127000

Reexamination Certificate

active

07450365

ABSTRACT:
The object of the present invention is to provide an electrostatic chuck in which the surface can be kept smooth after being exposed to plasma, so as to protect a material to be clamped such as a silicon wafer from being contaminated with particles, and which is excellent in clamping and releasing a material to be clamped. According to the present invention, there is provided an electrostatic chuck comprising a dielectric material in which alumina is 99.4 wt % or more, titanium oxide is more than 0.2 wt % and equal to or less than 0.6 wt %, whose average particle diameter is 2 μm or less, and whose volume resistivity is 108-1011Ωcm in room temperature, wherein the electrostatic chuck is used in a low temperature of 100° C or less.

REFERENCES:
patent: 2005/0207088 (2005-09-01), Nishimoto et al.
patent: 05-211228 (1993-08-01), None
patent: 06-097675 (1994-11-01), None
patent: 08-81258 (1996-03-01), None
patent: 10-279349 (1998-10-01), None
patent: 11-312729 (1999-11-01), None
patent: 3084869 (2000-07-01), None
patent: 2000-243820 (2000-09-01), None
patent: 2004-018296 (2004-01-01), None
patent: 2005-033125 (2005-02-01), None

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