Electrostatic chuck

Details Electrostatic chuck Electrostatic chuck

2007-07-16

2008-11-11

Jackson, Stephen W (Department: 2836)

Electricity: electrical systems and devices

Electric charge generating or conducting means

Use of forces of electric charge or field

C501S153000, C501S127000

Reexamination Certificate

active

07450365

ABSTRACT:
The object of the present invention is to provide an electrostatic chuck in which the surface can be kept smooth after being exposed to plasma, so as to protect a material to be clamped such as a silicon wafer from being contaminated with particles, and which is excellent in clamping and releasing a material to be clamped. According to the present invention, there is provided an electrostatic chuck comprising a dielectric material in which alumina is 99.4 wt % or more, titanium oxide is more than 0.2 wt % and equal to or less than 0.6 wt %, whose average particle diameter is 2 μm or less, and whose volume resistivity is 108-1011Ωcm in room temperature, wherein the electrostatic chuck is used in a low temperature of 100° C or less.

REFERENCES:
patent: 2005/0207088 (2005-09-01), Nishimoto et al.
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patent: 2000-243820 (2000-09-01), None
patent: 2004-018296 (2004-01-01), None
patent: 2005-033125 (2005-02-01), None

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