Electrostatic chuck

Chucks or sockets – With magnetic or electrostatic means

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Details

361234, B23Q 315

Patent

active

054133602

ABSTRACT:
An electrostatic chuck comprising a chucking body of a dielectric ceramics and an electrostatic inner electrode embedded in the chuck (first invention), the ceramics having a volume resistivity value not more than 10.sup.13 .OMEGA.cm at a high temperature not less than 250.degree. C. This electrostatic chuck can properly chuck, fix, carry and correct wafers even at a high temperature not less than 250.degree. C. in CVD, PVD or high temperature etching apparatuses.
An electrostatic chuck comprising a chucking body of a single-crystalline sapphire and an electrostatic inner electrode embedded in the chuck (second invention). This electrostatic chuck is characterized by extremely small leak current, high mechanical strength and strong chucking force even in the temperature range of room temperature to 500.degree. C. and in the voltage range of 500 to 2000 V. With this electrostatic chuck, objects to be chucked, such as silicon wafers, are less contaminated.

REFERENCES:
patent: 4431473 (1984-02-01), Okano et al.
patent: 4908074 (1990-03-01), Hosoi et al.
patent: 5103367 (1992-04-01), Horwitz et al.
patent: 5104834 (1992-04-01), Watanabe et al.
patent: 5151845 (1992-09-01), Watanabe et al.
patent: 5207437 (1993-05-01), Barnes et al.
patent: 5208156 (1994-01-01), Niori et al.

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