Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-06-05
2007-06-05
Zarneke, David A. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S751000, C257S752000, C257S753000, C257SE21579, C257SE21584, C257SE21585
Reexamination Certificate
active
10810719
ABSTRACT:
Interconnect structures with copper conductors being at least substantially free of internal seams or voids are obtained employing an electroplating copper bath containing dissolved cupric salt wherein the concentration of the salt is at least about 0.4 molar and up to about 0.5 molar concentration of an acid. Also provided are copper damascene structures having an aspect ratio of greater than about 3 and a width of less than about 0.275 μm and via openings filled with electroplated copper than is substantially free of internal seams or voids.
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Andricacos Panayotis C.
Boettcher Steven H.
Chung Dean S.
Deligianni Hariklia
Fluegel James E.
Connolly Bove & Lodge & Hutz LLP
International Business Machines - Corporation
Trepp Robert
Zarneke David A.
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