Electron beam lithography method using new material

Details Electron beam lithography method using new material Electron beam lithography method using new material

2006-12-05

2006-12-05

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

C430S942000

Reexamination Certificate

active

07144680

ABSTRACT:
An electron beam (EB) lithography method using a new material is provided. The method includes forming a thin layer using a Pb-based material; and patterning the thin layer by partially volatilizing the thin layer by irradiating electron beams. In this method, the thin layer formed of the Pb-based material is patterned using e-beams so that the linewidth of patterns formed on the thin layer can be greatly reduced.

REFERENCES:
patent: 5926360 (1999-07-01), Laibowitz et al.
patent: 6998712 (2006-02-01), Okada et al.
Das, Suman; “Physical Aspects of Process Control in Selective Laser Sintering of Metals”, Advanced Engineering Materials 2003, 5, No. 10, pp. 701-711.

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