Active solid-state devices (e.g. – transistors – solid-state diode – With shielding
Reexamination Certificate
2008-09-23
2008-09-23
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
C257S660000, C257SE23002, C257SE23145
Reexamination Certificate
active
11525603
ABSTRACT:
An isolation structure for electromagnetic interference includes a semiconductor substrate, a first integrated circuit in the semiconductor substrate, a second integrated circuit in the semiconductor substrate, and an isolation structure in a direct path between the first and the second integrated circuits, wherein the isolation structure comprises a through-silicon via.
REFERENCES:
patent: 5202754 (1993-04-01), Bertin et al.
patent: 6548391 (2003-04-01), Ramm et al.
patent: 2005/0282381 (2005-12-01), Cohen et al.
patent: 2006/0229583 (2006-10-01), Wang et al.
Su, David K., et al., “Experimental Results and Modeling Techniques for Substrate Noise in Mixed-Signal Integrated Circuits,” IEEE Journal of Solid-State Circuits, vol. 28, No. 4, Apr. 1993, pp. 420-430.
Chao Clinton
Hsu Chao-Shun
Karta Tjandra Winata
Lu Szu Wei
Peng Mark Shane
Pert Evan
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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