Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-08-28
2011-12-20
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S415000, C257SE29040, C257SE29324
Reexamination Certificate
active
08080839
ABSTRACT:
An electro-mechanical transistor includes a source electrode and a drain electrode spaced apart from each other. A source pillar is between the substrate and the source electrode. A drain pillar is between the substrate and the drain electrode. A moveable channel is spaced apart from the source electrode and the drain electrode. A gate nano-pillar is between the moveable channel and the substrate. A first dielectric layer is between the moveable channel and the gate nano-pillar. A second dielectric layer is between the source pillar and the source electrode. A third dielectric layer is between the drain pillar and the drain electrode.
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English Abstract for Publication No. 10-0745769.
English Abstract for Publication No. 1020080017784 (for 10-0807222).
Chae Soo-Doo
Kim Moon-Kyung
Lee Choong-Man
Rubin Joshua Mark
Sundararaman Ravishankar
F. Chau & Associates LLC
Mandala Victor A
Samsung Electronics Co,. Ltd.
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