EEPROM device having selecting transistors and method of...

Details EEPROM device having selecting transistors and method of... EEPROM device having selecting transistors and method of...

2006-03-28

2006-03-28

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S314000

Reexamination Certificate

active

07018894

ABSTRACT:
An EEPROM includes a device isolation layer for defining a plurality of active regions, a pair of control gates extending across the active regions and a pair of selection gates patterns that extend across the active regions and are interposed between the control gate patterns. A floating gate pattern is formed on intersection regions where the control gate patterns extend across the active regions. A lower gate pattern is formed on intersection regions where the selection gate patterns extend across the active regions. An inter-gate dielectric pattern is disposed between the control gate pattern and the floating gate pattern and a dummy dielectric pattern is disposed between the selection gate pattern and the lower gate pattern. The dummy dielectric pattern is substantially parallel to the selection gate pattern, and self-aligned with one sidewall of the selection gate pattern to overlap a predetermine width of the selection gate pattern.

REFERENCES:
patent: 4780431 (1988-10-01), Maggioni et al.
patent: 6221717 (2001-04-01), Cremonesi et al.
patent: 6420754 (2002-07-01), Takahashi et al.

Affiliated with

Also associated with

Rating

EEPROM device having selecting transistors and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with EEPROM device having selecting transistors and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and EEPROM device having selecting transistors and method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3552703