EEPROM and method of fabricating the same

Details EEPROM and method of fabricating the same EEPROM and method of fabricating the same

2005-07-05

2005-07-05

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S300000

Reexamination Certificate

active

06913969

ABSTRACT:
An electrically erasable programmable read-only memory (EEPROM) comprises trench isolation regions whose upper surfaces are recessed compared with an upper surface of the semiconductor substrate, thereby allowing use of all surfaces of a protrusion of the semiconductor substrate between the isolation regions, including the upper surface of the semiconductor substrate, as an active region. Accordingly, the performance of a memory cell can be improved by increasing the size of an active channel region without needing to change the size of a planar unit cell.

REFERENCES:
patent: 6323107 (2001-11-01), Ueda et al.
patent: 6380583 (2002-04-01), Hsieh et al.
patent: 6720611 (2004-04-01), Jang
patent: 4335578 (1992-11-01), None

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