Edge peeling improvement of low-k dielectric materials stack...

Details Edge peeling improvement of low-k dielectric materials stack... Edge peeling improvement of low-k dielectric materials stack...

2005-08-02

2005-08-02

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S697000, C257S758000, C257S760000

Reexamination Certificate

active

06924238

ABSTRACT:
A new method and structure is provided for the polishing of the surface of a layer of low-k dielectric material. Low-k dielectric material of low density and relatively high porosity is combined with low-k dielectric material of high density and low porosity whereby the latter high density layer is, prior to polishing of the combined layers, deposited over the former low density layer. Polishing of the combined layers removes flaking of the polished low-k layers of dielectric. This method can further be extended by forming conductive interconnects through the layers of dielectric, prior to the layer of dielectric.

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