Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-30
2011-08-30
Loke, Steven (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S216000, C257S369000, C257S310000
Reexamination Certificate
active
08008144
ABSTRACT:
A recessed access device having a gate electrode formed of two or more gate materials having different work functions may reduce the gate-induced drain leakage current losses from the recessed access device. The gate electrode may include a first gate material having a high work function disposed in a bottom portion of the recessed access device and a second gate material having a lower work function disposed over the first gate material and in an upper portion of the recessed access device.
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Ananthan Venkatesan
Tang Sanh D.
Goodwin David
Loke Steven
Micro)n Technology, Inc.
Wells St. John P.S.
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