Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-28
2006-03-28
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S587000, C257S369000
Reexamination Certificate
active
07018883
ABSTRACT:
Methods of manufacturing transistor gate electrodes including, in one embodiment, forming a metal layer over first and second regions of a substrate, wherein the first and second regions have different first and second dopant types, respectively. A semiconductor layer is formed over at least a portion of the second region. The metal layer is heated to form a metal gate electrode over the first region, and the metal layer and the semiconductor layer are collectively heated to form a composite metal gate electrode over the second region.
REFERENCES:
patent: 6653698 (2003-11-01), Lee et al.
patent: 6861712 (2005-03-01), Gao et al.
patent: 6872613 (2005-03-01), Xiang et al.
patent: 2004/0245578 (2004-12-01), Park et al.
Chang Chun-Yen
Li Tzung-Lin
Wang Chih-Hao
Wang Yen-Ping
Haynes and Boone LLP
Le Dung A.
Taiwan Semiconductor Manufacturing Company , Ltd.
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