Dual-wavelength exposure for reduction of implant shadowing

Details Dual-wavelength exposure for reduction of implant shadowing Dual-wavelength exposure for reduction of implant shadowing

2005-07-05

2005-07-05

Duda, Kathleen (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S394000, C430S494000

Reexamination Certificate

active

06913872

ABSTRACT:
A method for generating a photoresist structure is disclosed in which a layer of photoresist is deposited over a semiconductor substrate. In a first exposure, the layer of photoresist is exposed to deep ultraviolet light. A second exposure is then performed using a different wavelength of light to pattern the layer of photoresist. The photoresist is then developed so as to form a photoresist structure having reduced thickness and rounded corners. This gives a photoresist structure having a reduced shadow area. An angled ion implant can then be performed using the photoresist structure as a mask.

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