Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-15
2006-08-15
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S285000, C438S481000
Reexamination Certificate
active
07091095
ABSTRACT:
A strained crystalline layer having a tensilely strained SiGe portion and a compressively strained SiGe portion is disclosed. The strained crystalline layer is epitaxially bonded, or grown, on top of a SiGe relaxed buffer layer, in a way that the tensilely strained SiGe has a Ge concentration below that of the SiGe relaxed buffer, and the compressively strained SiGe has a Ge concentration above that of the SiGe relaxed buffer. The strained crystalline layer and the relaxed buffer can reside on top a semi-insulator substrate or on top of an insulating divider layer. In some embodiments the tensile SiGe layer is pure Si, and the compressive SiGe layer is pure Ge. The tensilely strained SiGe layer is suited for hosting electron conduction type devices and the compressively strained SiGe is suited for hosting hole conduction type devices. The strained crystalline layer is capable to seed an epitaxial insulator, or a compound semiconductor layer.
REFERENCES:
patent: 5847419 (1998-12-01), Imai et al.
patent: 6399970 (2002-06-01), Kubo et al.
patent: 6633066 (2003-10-01), Bae et al.
patent: 6703688 (2004-03-01), Fitzergald
patent: 6774015 (2004-08-01), Cohen et al.
patent: 6830976 (2004-12-01), Fitzgerald
patent: 6855649 (2005-02-01), Christiansen et al.
patent: 2003/0077867 (2003-04-01), Fitzgerald
patent: 2005/0202640 (2005-09-01), Fitzgerald
Picardat Kevin M.
Sai-Halasz George
Trepp Robert M.
LandOfFree
Dual strain-state SiGe layers for microelectronics does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dual strain-state SiGe layers for microelectronics, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual strain-state SiGe layers for microelectronics will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3707041