Dual poly layer and method of manufacture

Details Dual poly layer and method of manufacture Dual poly layer and method of manufacture

2007-04-24

2007-04-24

Le, Thao X. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C438S238000, C438S210000, C438S258000, C257S903000, C257S904000, C257SE21661, C257SE27098

Reexamination Certificate

active

10662609

ABSTRACT:
Semiconductor devices having a dual polysilicon electrode and a method of manufacturing are provided. The semiconductor devices include a first polysilicon layer deposited on a second polysilicon layer. Each polysilicon layer may be doped individually. The method also allows for some semiconductor devices on a wafer to have a single polysilicon wafer and other devices to have a dual polysilicon layer. In one embodiment, the semiconductor devices are utilized to form a memory device wherein the storage capacitors and transistors located in the cell region are formed with a dual polysilicon layer and devices in the periphery region are formed with a single polysilicon layer.

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