Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-18
2011-01-18
Landau, Matthew C (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27062, C257SE27064
Reexamination Certificate
active
07872317
ABSTRACT:
A semiconductor structure including at least one n-type field effect transistor (nFET) and at least one p-type field effect transistor (pFET) that both include a metal gate having nFET behavior and pFET behavior, respectively, without including an upper polysilicon gate electrode is provided. The present invention also provides a method of fabricating such a semiconductor structure.
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Yu, J.J., et al., “Direct Nitridation of High-k Metal Oxide Thin Films Using Argon Excimer Sources”, Electronics Letters, Oct. 27, 2005, pp. 1210-1211, vol. 41, No. 22.
Callegari Alessandro C.
Chudzik Michael P.
Doris Bruce B.
Narayanan Vijay
Paruchuri Vamsi K.
International Business Machines - Corporation
Landau Matthew C
McCall-Shepard Sonya D
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
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