Dual metal and dual dielectric integration for metal high-k...

Details Dual metal and dual dielectric integration for metal high-k... Dual metal and dual dielectric integration for metal high-k...

2011-05-17

2011-05-17

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S142000, C438S151000, C438S157000, C438S283000, C438S798000, C257S407000

Reexamination Certificate

active

07943457

ABSTRACT:
The present invention, in one embodiment, provides a method of forming a semiconductor device that includes providing a substrate including a first conductivity type region and a second conductivity type region; forming a gate stack including a gate dielectric atop the first conductivity type region and the second conductivity type region of the substrate and a first metal gate conductor overlying the high-k gate dielectric; removing a portion of the first metal gate conductor that is present in the first conductivity type region to expose the gate dielectric present in the first conductivity type region; applying a nitrogen based plasma to the substrate, wherein the nitrogen based plasma nitrides the gate dielectric that is present in the first conductivity type region and nitrides the first metal gate conductor that is present in the second conductivity type region; and forming a second metal gate conductor overlying at least the gate dielectric that is present in the first conductivity type region.

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Application No. PCT/US2010/030980—Filing Date: Apr. 14, 2010 Applicant: International Business Machines Corporation ISR/Written Opinion.

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