Dual-hybrid liner formation without exposing silicide layer...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S649000, C438S655000, C257SE21241, C257SE21622

Reexamination Certificate

active

10907415

ABSTRACT:
Methods of fabricating a semiconductor device including a dual-hybrid liner in which an underlying silicide layer is protected from photoresist stripping chemicals by using a hard mask as a pattern during etching, rather than using a photoresist. The hard mask prevents exposure of a silicide layer to photoresist stripping chemicals and provides very good lateral dimension control such that the two nitride liners are well aligned.

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patent: 2006/0099765 (2006-05-01), Yang

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