Dual-hybrid liner formation without exposing silicide layer...

Details Dual-hybrid liner formation without exposing silicide layer... Dual-hybrid liner formation without exposing silicide layer...

2008-07-08

2008-07-08

Pham, Thanhha (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S649000, C438S655000, C257SE21241, C257SE21622

Reexamination Certificate

active

07396724

ABSTRACT:
Methods of fabricating a semiconductor device including a dual-hybrid liner in which an underlying silicide layer is protected from photoresist stripping chemicals by using a hard mask as a pattern during etching, rather than using a photoresist. The hard mask prevents exposure of a silicide layer to photoresist stripping chemicals and provides very good lateral dimension control such that the two nitride liners are well aligned.

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