Dual gate stack CMOS structure with different dielectrics

Details Dual gate stack CMOS structure with different dielectrics Dual gate stack CMOS structure with different dielectrics

2005-01-27

2009-08-18

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27064

Reexamination Certificate

active

07576395

ABSTRACT:
Integrated circuit devices include a semiconductor substrate having a first doped region and a second doped region having a different doping type than the first doped region. A gate electrode structure on the semiconductor substrate extends between the first and second doped regions and has a gate insulation layer of a first high dielectric constant material in the first doped region and of a second high dielectric constant material, different from the first high dielectric constant material, in the second doped region. A gate electrode is on the gate insulation layer.

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