Dual-gate MOSFET with channel potential engineering

Details Dual-gate MOSFET with channel potential engineering Dual-gate MOSFET with channel potential engineering

1999-01-15

2000-04-18

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438163, 438197, 438267, 438289, 438304, 438585, H01L 21336

Patent

active

060514701

ABSTRACT:
A semiconductor device with reduced hot carrier injection and punch through is formed with a dual gate electrode comprising edge conductive portions, a central conductive portion, and dielectric sidewall spacers formed between the edge conductive portions and central conductive portion. The edge conductive portions provide high potential barriers against the active regions, thereby reducing threshold voltage roll off and leakage current.

REFERENCES:
patent: 5168072 (1992-12-01), Moslehi
patent: 5324673 (1994-06-01), Fitch et al.
patent: 5324960 (1994-06-01), Pfiester et al.
patent: 5358879 (1994-10-01), Brady et al.
patent: 5480820 (1996-01-01), Roth et al.
patent: 5498889 (1996-03-01), Hayden
patent: 5633781 (1997-05-01), Saenger et al.
patent: 5869374 (1999-02-01), Wu

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