Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-05-29
2007-05-29
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S753000, C257S767000, C257S773000, C257SE23142, C257SE23145
Reexamination Certificate
active
09871883
ABSTRACT:
An interconnect structure, comprising: a lower level wire having a side and a bottom, the lower level wire comprising: a lower core conductor and a lower conductive liner, the lower conductive liner on the side and the bottom of the lower level wire; an upper level wire having a side and a bottom, the upper level wire comprising an upper core conductor and an upper conductive liner, the upper conductive liner on the side and the bottom of the upper level wire; and the upper conductive liner in contact with the lower core conductor and also in contact with the lower conductive liner in a liner-to-liner contact region.
REFERENCES:
patent: 5635423 (1997-06-01), Huang et al.
patent: 5841195 (1998-11-01), Lin et al.
patent: 5973348 (1999-10-01), Ishibashi
patent: 5981378 (1999-11-01), Bothra
patent: 5989623 (1999-11-01), Chen et al.
patent: 5990011 (1999-11-01), McTeer
patent: 6034436 (2000-03-01), Iwasaki
patent: 6156651 (2000-12-01), Havemann
patent: 6221780 (2001-04-01), Greco et al.
patent: 6265779 (2001-07-01), Grill et al.
patent: 6362528 (2002-03-01), Anand
patent: 6373136 (2002-04-01), Otsuka et al.
patent: 6376370 (2002-04-01), Farrar
patent: 6380084 (2002-04-01), Lim et al.
patent: 0710981 (1996-05-01), None
patent: 0845808 (1998-06-01), None
patent: 0987752 (2000-03-01), None
patent: 2002-016138 (2002-01-01), None
Patent Abstracts of Japan, vol. 1998, No. 03, Feb. 27, 1998, JP 09 306989 A, 1 page, Yamagishi Nobuhisa.
Agarwala Birendra N.
Coker Eric M.
Correale, Jr. Anthony
Rathore Hazara S.
Sullivan Timothy D.
Parker Kenneth
Sabo William D.
Warren Matthew E.
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