Dry etching method

Details Dry etching method Dry etching method

2007-03-20

2007-03-20

Deo, Duy-Vu N. (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

C216S075000, C438S710000, C438S721000, C438S724000

Reexamination Certificate

active

10475268

ABSTRACT:
A tungsten silicide layer (104) is etched by plasma etching using Cl2+O2gas as etching gas. When etching of the tungsten silicide layer (104) is ended substantially, etching gas is switched to Cl2+O2+NF3and over etching is performed by plasma etching. Etching process is ended under a state where a polysilicon layer (103) formed beneath the tungsten silicide layer (104) is slightly etched uniformly. Residual quantity of the polysilicon layer (103) can be made uniform as compared with prior art and a high quality semiconductor device can be fabricated stably.

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