Dry etching method

Details Dry etching method Dry etching method

1998-01-05

2000-06-13

Breneman, Bruce

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

216 60, 438 14, 438 7, G01L 2130

Patent

active

060745681

ABSTRACT:
A method for diagnosing a function of plasma etching apparatuses and a method for estimating selectivity in an actual etching process in fabrication of semiconductor devices involves generating plasma of a gas mixture including halogen and oxygen in a predetermined condition. An intensity of one of first emissions from the plasma at a first wavelength and an intensity of one of second emissions from the plasma at a second wavelength is measured A ratio of the intensity of the one of first emissions to that of the one of second emissions is obtained. The obtained emission intensity ratio is compared with an emission intensity ratio which is previously measured for a plasma condition when the plasma etching apparatus operates normally.

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