Dry etchback of interconnect contacts

Details Dry etchback of interconnect contacts Dry etchback of interconnect contacts

2008-01-29

2008-01-29

Zameke, David A. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S639000, C438S700000, C257SE21597

Reexamination Certificate

active

07323410

ABSTRACT:
A method and structure for a composite stud contact interface with a decreased contact resistance and improved reliability. A selective dry etch is used which comprises a fluorine containing gas. The contact resistance is reduced by partially dry-etching back the tungsten contact after or during the M1 RIE process. The recessed contact is then subsequently metalized during the M1 liner/plating process. The tungsten contact height is reduced after it has been fully formed.

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