Dry-etch of indium and tin oxides with C2H5I gas

Details Dry-etch of indium and tin oxides with C2H5I gas Dry-etch of indium and tin oxides with C2H5I gas

1995-12-22

1998-12-01

Nguyen, Nam

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

216 23, 216 24, 216 60, 216 67, 216 72, 216 76, H01L 21306

Patent

active

058432779

ABSTRACT:
An RIE method and apparatus for etching through the material layer of a transparent-electrode (ITO) in a single continuous step at a rate better than 100 .ANG./min and with a selectivity better than 20 to 1 is disclosed. Chamber pressure is maintained at least as low as 60 mTorr. A reactive gas that includes ethyl iodide C.sub.2 H.sub.5 I) is used alone or in combination with another gas such as O.sub.2. Plasma-induced light emissions of reaction products and/or the reactants are monitored to determine the time point of effective etch-through.

REFERENCES:
patent: 4878993 (1989-11-01), Rossi et al.
patent: 5032221 (1991-07-01), Roselle et al.
patent: 5094978 (1992-03-01), Miyagaki et al.
patent: 5171401 (1992-12-01), Roselle
patent: 5230771 (1993-07-01), Roselle
patent: 5286337 (1994-02-01), Tsou
patent: 5318664 (1994-06-01), Saia et al.
patent: 5340438 (1994-08-01), Roselle et al.
Ulvac Technical Journal, No. 42, pp. 31-36, 1995.
Calahorra et al. "Reactive Ion Etching of Indium-Tin-Oxide Films" J. Electrochem. Soc. vol. 136 (6), pp. 1839-1840, Jun. 1989.
Chakrabarti et al "Dry etching of III-V semiconductors in CH3I, C2H5I and C3H7I discharges" J. Vac. Sci. Technol. B 10 (6) pp. 2378-2386, Nov. 1992.
Z. Calahara et al, Reactive Ion Etching Of Indium-Tin-Oxide Films, J. Electrochem. Soc., vol. 136, Jun. 1989 pp. 1839-1840.
M. Mohri et al., Plasma Etching of ITO Thin Films Using a CH.sub.4 /H.sub.2 Gas Mixture, Japanese Journal of Applied Physics, vol. 29, No. 10, Oct., 1990, pp. L 1932-L 1935.
Ulvac Technical Journal, No. 42, 1995, p. 31-36.

Affiliated with

Also associated with

Rating

Dry-etch of indium and tin oxides with C2H5I gas does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dry-etch of indium and tin oxides with C2H5I gas, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dry-etch of indium and tin oxides with C2H5I gas will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2392708