Driver circuit for semiconductor storage device and portable...

Static information storage and retrieval – Systems using particular element – Semiconductive

Reexamination Certificate

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C365S185050, C365S230060

Reexamination Certificate

active

06992926

ABSTRACT:
A semiconductor storage device is provided with a gate electrode, a semiconductor layer, a gate insulating film sandwiched between the gate electrode and the semiconductor layer, a channel region under the gate electrode, diffusion regions provided respectively on two sides of the channel regions and being of the other conductivity region than the channel region, memory elements1provided respectively on two sides of the gate electrode and having a function of holding charges, and a word line driver circuit, in which the CMOS technique is used. The driver circuit includes a common node for supplying a potential for activating an output inverter for driving a row word line. While the semiconductor storage device is in a read mode, a CMOS inverter other than the output inverter controls a signal at the common node, the CMOS inverter connected to a read input line. While the semiconductor storage device is in writing/erasing mode, a plurality of writing/erasing transistors connected in series to the node are activated in accordance with an address signal, in order to lower the common node to a low potential.

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patent: WO 2004/034474 (2004-04-01), None

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