Static information storage and retrieval – Read/write circuit – Precharge
Patent
1998-04-06
1999-02-09
Dinh, Son T.
Static information storage and retrieval
Read/write circuit
Precharge
365149, G11C 700
Patent
active
058703438
ABSTRACT:
A pre-charge and isolation circuit for a folded bit line DRAM array to reduce noise coupling between adjacent bit lines of a DRAM array by connecting only one bit line within one sub-array to be connected to a sense amplifier, while the complementary bit line used for the reference voltage of the sense amplifier is selected from an adjacent sub-array, is disclosed. The isolation pre-charge circuit will be connected to a pair of bit lines within a DRAM array to pre-charge portions the pair of bit lines to a reference voltage level and to connect a selected DRAM cell to a latching sense amplifier.
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Chi Min-hwa
Lin Ming-Zen
Ackerman Stephen B.
Dinh Son T.
Knowles Bill
Saile George O.
Vanguard International Semiconductor Corporation
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