Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-12-02
1999-08-31
Codd, Bernard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438210, 438296, 438634, 438660, 438722, 438724, 438740, 438763, 438787, 438791, 438970, H01L 2170
Patent
active
059465697
ABSTRACT:
A method of removing an etch-stop layer such as Si.sub.3 N.sub.4 from the vicinity of contact openings is described. A need for the removal of this material arises when the surface of the etch-stop layer is exposed during processing and the substrate is subjected to temperatures above 700.degree. C. Because of the high intrinsic interfacial stress residing in the Si.sub.3 N.sub.4, the thermal impact causes cracks in the layer which emanate from the corners of the contact openings and travel, with branching, over a considerable distance from the opening. These cracks are prone to moisture adsorption and contamination which can compromise the reliability and performance of contacts. In addition, where contact openings are formed through insulating layers having an intermediate etch-stop layer, protrusions of the etch-stop layer occur within the contact opening because of un-even etching. These protrusions shadow the flux of subsequently deposited barrier materials into the opening, thereby forming weak spots along the contact walls. Timely removal the etch-stop layer around the contact opening eliminates these protrusions.
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Ackerman Stephen B.
Codd Bernard
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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