Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-09
2007-01-09
Pham, Thanhha S. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S303000, C257S306000
Reexamination Certificate
active
11098112
ABSTRACT:
A method for fabricating a high-density array of crown capacitors with increased capacitance while reducing process damage to the bottom electrodes is achieved. The process is particularly useful for crown capacitors for future DRAM circuits with minimum feature sizes of 0.18 micrometer or less. A conformal conducting layer is deposited over trenches in an interlevel dielectric (ILD) layer, and is polished back to form capacitor bottom electrodes. A novel photoresist mask and etching are then used to pattern the ILD layer to provide a protective interlevel dielectric structure between capacitors. The protective structures prevent damage to the bottom electrodes during subsequent processing. The etching also exposes portions of the outer surface of bottom electrodes for increased capacitance (>50%). In a first embodiment the ILD structure is formed between pairs of adjacent bottom electrodes, and in a second embodiment the ILD structure is formed between four adjacent bottom electrodes.
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Chao Lan-Lin
Hu Chanming
Lin Chia-Hui
Lin Chun-Chieh
Tsai Chia-Shiung
Haynes and Boone LLP
Pham Thanhha S.
Taiwan Semiconductor Manufacturing Company , Ltd.
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