Double patterning strategy for contact hole and trench in...

Details Double patterning strategy for contact hole and trench in... Double patterning strategy for contact hole and trench in...

2008-03-12

2011-11-01

Duda, Kathleen (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S394000

Reexamination Certificate

active

08048616

ABSTRACT:
A method of lithography patterning includes forming a first resist pattern on a substrate, the first resist pattern including a plurality of openings therein on the substrate; forming a second resist pattern on the substrate and within the plurality of openings of the first resist pattern, the second resist pattern including at least one opening therein on the substrate; and removing the first resist pattern to uncover the substrate underlying the first resist pattern.

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Feng-Cheng Hsu and Chun-Kuang Chen, Double Patterning Strategy for Contact Hole and Trench, Filed on Nov. 30, 2007, U.S. Appl. No. 11/948,444, 18 Pages.
Korean Intellectual Property Office, Office Action dated Sep. 17, 2010; Application No. 10-2008-0102004; 4 pages in Korean, 4 pages in English.

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