Double patterning strategy for contact hole and trench in...

Details Double patterning strategy for contact hole and trench in... Double patterning strategy for contact hole and trench in...

2011-08-30

2011-08-30

Le, Thao (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C257SE21037

Reexamination Certificate

active

08008206

ABSTRACT:
A method of lithography patterning includes forming a hard mask layer on a material layer and forming a capping layer on the hard mask layer. The capping layer does not react with oxygen gas during a photoresist ashing process. The capping layer is patterned by using a first resist pattern and a second resist pattern as etch masks. After the capping layer is patterned, the hard mask layer is patterned by using the patterned capping layer as an etch mask.

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