Double-dome reactor for semiconductor processing

Details Double-dome reactor for semiconductor processing Double-dome reactor for semiconductor processing

1990-03-09

1992-04-28

Bueker, Richard

Coating processes

Coating by vapor, gas, or smoke

118715, 118725, C23C 1600

Patent

active

051087928

ABSTRACT:
A thermal reactor for epitaxial deposition on a wafer comprises a double-dome vessel and dual heat sources. Each heat source comprises inner and outer circular arrays of infrared lamps. Circumferential heating uniformity is assured by the cylindrical symmetry of the vessel and the heating sources. Radial heating uniformity is provided by independent control of inner and outer heating arrays for both the top and bottom heat sources. The relative temperatures of wafer and susceptor are controlled by adjusting relative energies provided by the upper and lower heat sources so that backside migration. Reduced pressure operation is provided for by the convex top and bottom domes. Due to the provided control over transmitted energy distribution, a susceptor can have low thermal mass so that elevated temperature can be achieved more quickly and cooling can be facilitated as well. This improves throughput and reduces manufacturing costs per wafer. Reagent gas introduction can be axial or radial as desired.

REFERENCES:
patent: 3627590 (1971-12-01), Mammel
patent: 4524719 (1985-06-01), Campbell
patent: 4539933 (1985-09-01), Campbell
patent: 4545327 (1985-10-01), Campbell
patent: 4796562 (1989-01-01), Brors et al.

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