Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-04-24
2007-04-24
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S048000, C257S231000
Reexamination Certificate
active
11036260
ABSTRACT:
Provided are a doping mask and methods of manufacturing a charge transfer image device and a microelectronic device using the same. The method includes forming a photoresist film on an entire surface of a substrate or sub-substrate having a peripheral circuit region and a pixel region, removing the photoresist film on an upper surface of the substrate intended for the peripheral circuit region and patterning the photoresist film on an upper surface of the substrate intended for the pixel region to form a photoresist pattern having an array of openings with a predetermined pitch, implanting ions at the same concentration level into the entire surface of the substrate using the photoresist pattern as a doping mask, and diffusing the implanted ions by annealing. The pitch is determined so that ions implanted through each opening diffuse toward those implanted through an adjacent one to form wells.
REFERENCES:
patent: 5444007 (1995-08-01), Tsuchiaki
patent: 6436729 (2002-08-01), Abe
patent: 2000-31466 (2000-01-01), None
patent: 10-2001-0006152 (2001-01-01), None
patent: 02-12907 (2002-02-01), None
Dang Phuc T.
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
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