Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-03-19
2009-12-08
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S231000, C257SE21637, C257SE27062
Reexamination Certificate
active
07629212
ABSTRACT:
A method of fabricating a dual metal gate structures in a semiconductor device, the method comprising forming a gate dielectric layer above a semiconductor body, forming a work function adjusting layer on the dielectric gate layer in the PMOS region, depositing a tungsten germanium gate electrode layer above the work function adjusting material in the PMOS region, depositing a tungsten germanium gate electrode layer above the gate dielectric in the NMOS region annealing the semiconductor device, depositing a metal nitride barrier layer on the tungsten germanium layer, depositing a polysilicon layer over the metal nitride, patterning the polysilicon layer, the metal nitride layer, the tungsten germanium layer, work function adjusting layer and the gate dielectric layer to form a gate structure, and forming a source/drain on opposite sides of the gate structure.
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Pas Michael Francis
Ramin Manfred
Visokay Mark R.
Brady III Wade J.
Franz Warren L.
Ghyka Alexander G
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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