Dopant activation in doped semiconductor substrates

Details Dopant activation in doped semiconductor substrates Dopant activation in doped semiconductor substrates

2011-08-02

2011-08-02

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S142000, C438S162000, C438S308000, C438S478000, C438S510000, C438S584000, C438S780000, C438S781000

Reexamination Certificate

active

07989366

ABSTRACT:
Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is disposed. A plasma is formed from the carbon precursor in the substrate processing chamber. A carbon film is deposited over the substrate with the plasma. A temperature of the substrate is maintained while depositing the carbon film less than 500° C. The deposited carbon film is exposed to electromagnetic radiation for a period less than 10 ms, and has an extinction coefficient greater than 0.3 at a wavelength comprised by the electromagnetic radiation.

REFERENCES:
patent: 2005/0074956 (2005-04-01), Autryve et al.
patent: 2006/0081558 (2006-04-01), Collins et al.
patent: 2006/0113038 (2006-06-01), Gondhalekar et al.
patent: 2006/0133004 (2006-06-01), Yamamura
patent: 2006/0156979 (2006-07-01), Thakur et al.

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