Domed extension for process chamber electrode

Details Domed extension for process chamber electrode Domed extension for process chamber electrode

1993-10-22

1996-01-02

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 67, 156345, 118723E, 427569, H05H 100

Patent

active

054800528

ABSTRACT:
A domed dielectric extension is set atop a standard electrode in a bell jar shaped process chamber to decrease electrical interaction between the electrode and the process chamber and thereby decrease the stagnant plasma in the region between the electrode and the process chamber lid that promotes polymer deposition upon the inner surface of a process chamber lid. The extension, made of a process inert dielectric material such as polycarbonate, has an upper surface that is curved to conform to the shape of the inner surface of the process chamber lid and that is precisely spaced from the upper portion of the process chamber lid inner surface.

REFERENCES:
patent: 4298443 (1981-03-01), Maydan
patent: 4419201 (1983-12-01), Levinstein et al.
patent: 4786392 (1988-11-01), Kruchowski et al.
patent: 4968374 (1990-11-01), Tsukada et al.
patent: 5112185 (1992-05-01), Koike
patent: 5298720 (1994-03-01), Cuomo et al.

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