Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-22
2008-08-05
Le, Uyen-Chau N. (Department: 4158)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S527000, C438S551000, C438S555000
Reexamination Certificate
active
07407851
ABSTRACT:
A method of fabricating an electronic device and a resulting electronic device. The method includes forming a pad oxide layer on a substrate, forming a silicon nitride layer over the pad oxide layer, and forming a top oxide layer over the silicon nitride layer. A first dopant region is then formed in a first portion of the substrate. A first portion of the top oxide layer is removed; a remaining portion of the top oxide layer is used to align a second dopant mask and a second dopant region is formed. An annealing step drives-in the dopants but oxygen diffusion to the substrate is limited by the silicon nitride layer; the silicon nitride layer thereby assures that the uppermost surface of the silicon is substantially planar in an area proximate to the dopant regions after the annealing step.
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Dudek Volker
Graf Michael
Miller Gayle W.
Rathbun Irwin D.
Schwantes Stefan
Le Uyen-Chau N.
Montalvo Eva
Schwegman Lundberg & Woessner, P.A.
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