Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1993-01-21
1994-04-19
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257677, 257765, 257766, 257785, 361813, H01L 2348, H01L 2940
Patent
active
053048474
ABSTRACT:
Annealed copper foil (12) is coated with chromium film (16), followed by coating with an appropriate thickness of gold film (14) and is thermocompression bonded to an aluminum metallized substrate (18) on a silicon chip (30) to provide solderable, high current contacts to the chip. The foil is formed into appropriate electrical network-contact patterns (40) and is bonded to the silicon chip only where aluminum metallization exists on the chip. Leaf (wing) portions (46) of the foil extend beyond the boundaries of the silicon chip for subsequent retroflexing over the foil to provide electrical contact at predesignated locations (49). External contacts to the foil are made by penetrating through a ceramic lid positioned directly above the foil area. Thus, direct thermocompression bonding of a principally copper foil to aluminum semiconductor pads can replace current gold detent/bump connections by securing a copper conductor to a silicon chip through an intermetallic AuAl.sub.2 link and an aluminum stratum.
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Glascock, II Homer H.
McMullen James G.
Neugebauer Constantine A.
Paik Kyung W.
General Electric Company
Hille Rolf
Ostrowski David
Snyder Marvin
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