Direct gas-phase doping of semiconductor wafers using an organic

Details Direct gas-phase doping of semiconductor wafers using an organic Direct gas-phase doping of semiconductor wafers using an organic

1997-04-23

2000-07-18

Chaudhari, Chandra

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

438566, H01L 2126

Patent

active

060906901

ABSTRACT:
A direct doping method for semiconductor wafers, comprising the steps of providing a semiconductor wafer, exposing the surface of the wafer to a process medium in order to directly dope at least a portion of the surface of the wafer, wherein the process medium comprises a dopant gas, and wherein the dopant gas comprises an organic compound of a dopant species, and heating the wafer, thermally activating the direct doping process and causing solid-state diffusion of the dopant species into the semiconductor wafer surface. The organic source of a dopant species includes the organic compounds comprising boron, arsenic and phosphorous. The wafer is heated in the presence of an organic dopant source, thermally activating the doping process and causing surface chemisorption, surface dissociation, and solid-state diffusion of the dopant species into the wafer surface. The organic dopant source can be used with a germanium-containing additive gas, a halogen-containing compound or a remote plasma energy source.

REFERENCES:
patent: 4504331 (1985-03-01), Kuech et al.
patent: 4618381 (1986-10-01), Sato et al.
patent: 4734514 (1988-03-01), Melas et al.
patent: 4830982 (1989-05-01), Dentai et al.
patent: 4904616 (1990-02-01), Bohling et al.
patent: 4988640 (1991-01-01), Bohling et al.
patent: 5015747 (1991-05-01), Hostalek et al.
patent: 5128275 (1992-07-01), Takikawa et al.
patent: 5156461 (1992-10-01), Moslehi et al.
patent: 5242859 (1993-09-01), Degelormo et al.
patent: 5275966 (1994-01-01), Gedridge, Jr.
patent: 5293216 (1994-03-01), Moslehi
patent: 5300185 (1994-04-01), Hori et al.
patent: 5387545 (1995-02-01), Kiyota
patent: 5424244 (1995-06-01), Zhang
patent: 5489550 (1996-02-01), Moslehi
C. M. Ransom, T. N. Jackson, J. F. DeGelormo, C. Zeller, D.E. Kotecki, C. Graimann, D.K. Sadana and J. Benedict, "Shallow n.sup.+ Junctions in Silicon By Arsenic Gas-Phase Doping", J. Electrochem. Soc., vol. 141, No. 5, pp. 1378-1381, (1994).
J. Nishizawa, K. Aoki and T. Akamine, "Ultrashallow, High Doping of Boron Using Molecular Layer Doping", Appl. Phys. Lett., vol. 56, No. 14, Apr. 2, 1990, pp. 1334-1335.
Yukihiro Kiyota, Tohru Nakamura, Taroh Inada, Atsushi Kuranouchi and Yasuaki Hirano, "Characteristics of Shallow Boron-Doped Layers in Si by Rapid Vapor-Phase Direct Doping", J. Electrochem. Soc., vol. 140, No. 4, pp. 1117-1121, (1993).
Mehrdad M. Moslehi, Cecil Davis and Allen Bowling, "Microelectronics Manufacturing Science and Technology: Single-Wafer Thermal Processing and Wafer Cleaning", TI Technical Journal, Sep.-Oct. 1992, pp. 44-53.

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