Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-30
2011-08-30
Nguyen, Dao H (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S149000, C438S157000, C438S200000, C438S218000, C438S257000, C438S258000, C438S790000, C257S324000, C257S329000, C257S401000, C257S500000, C257S501000, C257SE21625, C257SE21629, C257SE21679, C257SE27081, C257SE27103
Reexamination Certificate
active
08008146
ABSTRACT:
A method (that produces a structure) patterns at least two wires of semiconductor material such that a first wire of the wires has a larger perimeter than a second wire of the wires. The method performs an oxidation process simultaneously on the wires to form a first gate oxide on the first wire and a second gate oxide on the second wire. The first gate oxide is thicker than the second gate oxide. The method also forms gate conductors over the first gate oxide and the second gate oxide, forms sidewall spacers on the gate conductors, and dopes portions of the first wire and the second wire not covered by the sidewall spacers and the gate conductors to form source and drain regions within the first wire and the second wire.
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Bangsaruntip Sarunya
Bryant Andres
Cohen Guy
Sleight Jeffrey W.
Gibb I.P. Law Firm LLC
International Business Machines - Corporation
Kotulak, Esq. Richard M.
Nguyen Dao H
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